Pealkiri |
Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimine / Muhammad Haroon Rashid ; [supervisors: Ants Koel, Toomas Rang ; Tallinn University of Technology, School of Information Technologies, Thomas Johann Seebeck Department of Electronics] |
Autor |
Rashid, Muhammad Haroon, 1990- autor
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Ilmunud |
Tallinn : TalTech Press, c2021 |
Ilmumiskoht |
Harjumaa |
Kirjeldus |
175 lk. : ill. ; 25 cm |
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